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Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

dc.creatorPunnoose, Alexander
dc.creatorFinkel’stein, Alexander M.
dc.creatorMokashi, A.
dc.creatorKravchenko, S. V.
dc.date.accessioned2019-10-09T16:19:15Z
dc.date.available2019-10-09T16:19:15Z
dc.date.issued2010
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttps://hdl.handle.net/1969.1/180428
dc.format.extent0en
dc.publisherPhysical Review B - Condensed Matter and Materials Physics
dc.relation.ispartof1foldr Import 2019-10-08 Batch 5en
dc.relation.uri10.1103/PhysRevB.82.201308en
dc.titleTest of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETsen


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