Now showing items 1-9 of 9

    • En Gad, Eyal; Li, Yue; Kliewer, Joerg; Langberg, Michael; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2019-08-13)
      Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
    • Jiang, Anxiao; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-07-17)
      We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the ...
    • Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2017-05-30)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Jiang, Anxiao; Jehoshua, Bruck; Wang, Zhiying; Zhou, Hongchao (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2014-07-15)
      A memory device having a plurality of cells, each of which stores a value, where the values of the cells are mapped to discrete levels and the discrete levels represent data, is programmed by determining a maximum number ...
    • Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
    • Li, Yue; En Gad, Eyal; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-05-29)
      The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for ...
    • Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2015-07-21)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Jiang, Anxiao; Bohossian, Vasken Z.; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2010-02-02)
      Systems and methods, including computer software products, can be used to update or modify data stored in a memory. One or more variables are represented with one or more cell values in a memory. Each variable is associated ...