Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
Abstract
Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of m transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one.
Subject
G11C 16/0441G11C 11/5628
G06F 3/0643
G11C 11/5621
G06F 3/0679
G06F 12/0246
G06F 3/0619
G11C 11/5635
G11C 16/0483
H03M 1/14
Collections
Citation
Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua (2017). Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /177206.