Joint rewriting and error correction in write-once memories
Abstract
Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory model. In some embodiments, code construction is based on polar codes, and supports any number of rewrites and corrects a substantial number of errors. The code may be analyzed for a binary symmetric channel. The results can be extended to multi-level cells and more general noise models.
Subject
G06F 3/0679G06F 3/064
G06F 11/1012
H03M 13/13
G06F 3/0619
G11C 17/146
G06F 11/1068
G11C 2029/0411
G06F 12/0246
G11C 11/5628
G11C 11/5642
Collections
Citation
Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (2018). Joint rewriting and error correction in write-once memories. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /177240.