Abstract
An accurate transient fault model is presented in this thesis. A 7-term exponential current upset model is derived from the results of a device-level, 3-dimensional, single-event-upset simulation. A curve-fitting algorithm is used to extract the numerical model from the empirical data. The model is implemented in a HSPICE simulation environment as a current-injection source for fault simulation. The current transient model is used to conduct electrical-level fault injection simulations on a static RAM cell and subcircuits from two commercial microprocessors. The results from the 7-term exponential model are compared with the results from the widely accepted double-exponential transient model. The experimental data indicate that, for a given charge level, the 7-term exponential fault model results in a higher chance of having a latch error. More importantly, different latch-error patterns are captured from the target circuits under the new fault model.
Yuan, Xuejun (1996). Transient fault modeling and fault injection simulation. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1996 -THESIS -Y83.