Indium Phosphide MOS Transistor Fabrication And Characterization

dc.contributor.advisor	Anjaneyulu, Y.
dc.creator	Pylant, Chris D.
dc.date.accessioned	2022-04-01T13:47:49Z
dc.date.available	2022-04-01T13:47:49Z
dc.date.issued	1986
dc.identifier.uri	https://hdl.handle.net/1969.1/CAPSTONE-PylantC_1986
dc.description	Program year: 1985/1986	en
dc.description	Digitized from print original stored in HDR	en
dc.description.abstract	An anodic method of forming an insulator on Indium Phosphide for use in the fabrication of MOS devices is examined. Aluminumin oxide insulating layers are produced from the oxidation of deposited aluminum films in an aqueous solution. MOS capacitors are fabricated. Experimental procedure and methods of analysis are explained. Resulting Capacitance vs. Voltage data is given for typical capacitors, and compared to data obtained from MOS capacitors formed from the plasma enhanced chemical vapor deposition of silicon dioxide. Reasons for the generally poor quality insulators which result are discussed.	en
dc.format.extent	26 pages	en
dc.format.medium	electronic	en
dc.format.mimetype	application/pdf
dc.subject	Indium Phosphide	en
dc.subject	anodic	en
dc.subject	MOS devices	en
dc.subject	experimental procedure	en
dc.title	Indium Phosphide MOS Transistor Fabrication And Characterization	en
dc.title.alternative	Indium Phosphide MOS Transistor Fabrication and Characterization	en
dc.type	Thesis	en
thesis.degree.department	Electrical Engineering	en
thesis.degree.grantor	University Undergraduate Fellow	en
thesis.degree.level	Undergraduate	en
dc.type.material	text	en