Electronic Transport Properties of Al-based Amorphous Alloys

dc.contributor.advisor	Naugle, Donald G.
dc.creator	Stephens, Tab A.
dc.date.accessioned	2022-04-04T13:49:11Z
dc.date.available	2022-04-04T13:49:11Z
dc.date.issued	1990
dc.identifier.uri	https://hdl.handle.net/1969.1/CAPSTONE-MobleyD_1982
dc.description	Program year: 1989/1990	en
dc.description	Digitized from print original stored in HDR	en
dc.description.abstract	The electronic transport properties of ternary Al-based amorphous alloys are studied. A description of the evaporation system and measuring cryostat made for the project is given. Preliminary Hall Effect, resistivity, and magneto resistance data is taken for (Ni.₂₄ Ti.₇₆)₁₋ₓ Alₓ (0 < x < .9) thin films. Magnetoresistance measurements are made on (Ni.₅₀ Al.₅₀)₁₋ₓ Alₓ (x = 0, .2) ribbons. Status of the Undergraduate Fellows Project and further plans are discussed.	en
dc.format.extent	77 pages	en
dc.format.medium	electronic	en
dc.format.mimetype	application/pdf
dc.subject	electronic transport	en
dc.subject	aluminum-based amporphus alloy	en
dc.subject	Hall Effect	en
dc.subject	resistivity	en
dc.subject	magnetoresistance data	en
dc.title	Electronic Transport Properties of Al-based Amorphous Alloys	en
dc.type	Thesis	en
thesis.degree.department	Physics	en
thesis.degree.grantor	University Undergraduate Fellow	en
thesis.degree.level	Undergraduate	en
dc.type.material	text	en