Electronic Transport Properties of Al-based Amorphous Alloys
Abstract
The electronic transport properties of ternary Al-based amorphous alloys are studied. A description of the evaporation system and measuring cryostat made for the project is given. Preliminary Hall Effect, resistivity, and magneto resistance data is taken for (Ni.₂₄ Ti.₇₆)₁₋ₓ Alₓ (0 < x < .9) thin films. Magnetoresistance measurements are made on (Ni.₅₀ Al.₅₀)₁₋ₓ Alₓ (x = 0, .2) ribbons. Status of the Undergraduate Fellows Project and further plans are discussed.
Description
Program year: 1989/1990Digitized from print original stored in HDR
Subject
electronic transportaluminum-based amporphus alloy
Hall Effect
resistivity
magnetoresistance data
Citation
Stephens, Tab A. (1990). Electronic Transport Properties of Al-based Amorphous Alloys. University Undergraduate Fellow. Available electronically from https : / /hdl .handle .net /1969 .1 /CAPSTONE -MobleyD _1982.