Browsing Programs, Centers, and Institutes by Author "Weichold, Mark H."

Now showing items 1-6 of 6

    • A Dense Programmable Read Only Memory 
      Madla, Laura Elizabeth (1986)
      The programmable read only memory (PROM) is a valuable piece of hardware in today's fast-growing microcomputer industry because of its large memory capacity and its speed. This project involves the production and testing ...
    • Direct Write Laser Lithography For Discretionary Interconnections 
      Karunatileka, Muditha A. (1986)
      A novel method for making discretionary interconnections involves direct writing on wafer using a precision laser beam and metallization using the lift off process. After experimenting with several line thicknesses, ...
    • Effects of Lateral Confinement in a Superlattice 
      Silva, Julio Toro (1996)
      We discuss the progress that we have had in studying the effects that lateral confinement has in the electronic bandstructure of a superlattice, and consequently, on its current-voltage characteristics. This study has been ...
    • Investigation Into The Viability Of A Magnetic Thin Film As An Analog, Nonvolatile Memory Device 
      Grein, Matthew (1993)
      A %50Co-50%Fe magnetic film of 1000Å has been used as the memory element fabricated on a silicon substrate to be used as a nonvolatile memory with read/write capabilities. A Hall element has been employed to detect the ...
    • Investigation of Four Circuit Designs for Mutlivalued Logic Applications 
      Chinchilla, Kenneth (1997)
      Multivalued logic (MVL) circuits display more than the two states (LOW and HIGH) exhibited by traditional logic circuits. A ternary logic circuit, for example, may contain states such as HIGH, MEDIUM, and LOW. The demands ...
    • Magnetostrictive Current Sensor Development Using Fiber Optics 
      Williams, Stephen E. (1991)
      The ability to develop a fiber optic current sensor utilizing the magnetostrictive characteristics of nickel (Ni) has been proven. A Mach-Zehnder interferometer, which had a 2. 5-μm layer of Ni 15-cm long on its sensing ...