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Rank-modulation rewriting codes for flash memories
(United States. Patent and Trademark Office, 2015-07-21)
Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
Joint rewriting and error correction in write-once memories
(United States. Patent and Trademark Office, 2018-04-17)
Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
Rank-modulation rewriting codes for flash memories
(United States. Patent and Trademark Office, 2018-03-13)
Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...