Joint rewriting and error correction in write-once memories
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Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory model. In some embodiments, code construction is based on polar codes, and supports any number of rewrites and corrects a substantial number of errors. The code may be analyzed for a binary symmetric channel. The results can be extended to multi-level cells and more general noise models.
Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (2018). Joint rewriting and error correction in write-once memories. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from