Search
Now showing items 1-2 of 2
Asymmetric error correction and flash-memory rewriting using polar codes
(United States. Patent and Trademark Office, 2019-08-13)
Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
Joint rewriting and error correction in write-once memories
(United States. Patent and Trademark Office, 2018-04-17)
Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...