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dc.contributor.advisornguyen, cam
dc.creatorBae, Juseok
dc.date.accessioned2020-02-25T16:27:23Z
dc.date.available2020-02-25T16:27:23Z
dc.date.created2017-12
dc.date.issued2017-12-18
dc.date.submittedDecember 2017
dc.identifier.urihttp://hdl.handle.net/1969.1/187268
dc.description.abstractA concurrent dual-band phased-array transmitter (TX) and its constituent components are studied in this dissertation. The TX and components are designed for the unlicensed bands, 22–29 and 57–64 GHz, using a 0.18-μm BiCMOS technology. Various studies have been done to design the components, which are suitable for the concurrent dual-band phased-array TX. The designed and developed components in this study are an attenuator, switch, phase shifter, power amplifier and power divider. Attenuators play a key role in tailoring main beam and side-lobe patterns in a phased-array TX. To perform the function in the concurrent dual-band phased-array TX, a 22–29 and 57–64 GHz concurrent dual-band attenuator with low phase variations is designed. Signal detection paths are employed at the output of the phased-array TX to monitor the phase and amplitude deviations/errors, which are larger in the high-frequency design. The detected information enables the TX to have an accurate beam tailoring and steering. A 10–67 GHz wide-band attenuator, covering the dual bands, is designed to manipulate the amplitude of the detected signal. New design techniques for an attenuator with a wide attenuation range and improved flatness are proposed. Also, a topology of dual-function circuit, attenuation and switching, is proposed. The switching turns on and off the detection path to minimize the leakages while the path is not used. Switches are used to minimize the number of components in the phased-array transceiver. With the switches, some of the bi-directional components in the transceiver such as an attenuator, phase shifter, filter, and antenna can be shared by the TX and receiver (RX) parts. In this dissertation, a high-isolation switch with a band-pass filtering response is proposed. The band-pass filtering response suppresses the undesired harmonics and intermodulation products of the TX. Phase shifters are used in phased-array TXs to steer the direction of the beam. A 24-GHz phase shifter with low insertion loss variation is designed using a transistor-body-floating technique for our phased-array TX. The low insertion loss variation minimizes the interference in the amplitude control operation (by attenuator or variable gain amplifier) in phased-array systems. BJTs in a BiCMOS process are characterized across dc to 67 GHz. A novel characterization technique, using on-wafer calibration and EM-based de-embedding both, is proposed and its accuracy at high frequencies is verified. The characterized BJT is used in designing the amplifiers in the phased-array TX. A concurrent dual-band power amplifier (PA) centered at 24 and 60 GHz is proposed and designed for the dual-band phased-array TX. Since the PA is operating in the dual frequency bands simultaneously, significant linearity issues occur. To resolve the problems, a study to find significant intermodulation (IM) products, which increase the third intermodulation (IM3) products most, has been done. Also, an advanced simulation and measurement methodology using three fundamental tones is proposed. An 8-way power divider with dual-band frequency response of 22–29 and 57–64 GHz is designed as a constituent component of the phased-array TX.en
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.subjectphased-array transmitteren
dc.subjectmulti-band circuit/systemen
dc.subjectconcurrent dual-band circuit/systemen
dc.subjectmulti-function circuiten
dc.subjectdual-function circuiten
dc.subjectBiCMOSen
dc.subjectCMOSen
dc.subjectRFICen
dc.subjectmillimeter-waveen
dc.subjectattenuatoren
dc.subjectphase shifteren
dc.subjectpower amplifieren
dc.subjectbipolar junction transistoren
dc.subjectband-pass filteren
dc.subjectdiplexeren
dc.subjectswitchen
dc.subjectbody-floating technique, deep n-type well (DNW)en
dc.subjectdistributed attenuatoren
dc.subjectpi-attenuatoren
dc.subjectswitching attenuatoren
dc.subjectT-attenuatoren
dc.subjectinsertion-loss variationen
dc.subjectphase variationen
dc.subjectthird order intermodulationen
dc.subjectfrequency transformationen
dc.subjectfilter skirt characteristicen
dc.subjectde-embeddingen
dc.subjectdevice modelingen
dc.subjecton-wafer calibrationen
dc.subjectsilicon germanium BiCMOSen
dc.titleMillimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Componentsen
dc.typeThesisen
thesis.degree.departmentElectrical and Computer Engineeringen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorTexas A&M Universityen
thesis.degree.nameDoctor of Philosophyen
thesis.degree.levelDoctoralen
dc.contributor.committeeMemberkarsilayan, aydin
dc.contributor.committeeMemberkish, laszlo b
dc.contributor.committeeMembereverett, mark
dc.type.materialtexten
dc.date.updated2020-02-25T16:27:24Z
local.etdauthor.orcid0000-0003-3886-8991


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