Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

dc.creator	Chen, Zhangxin
dc.creator	Cockburn, Bernardo
dc.creator	Jerome, Joseph W.
dc.creator	Shu, Chi-Wang
dc.date.accessioned	2019-10-09T18:50:58Z
dc.date.available	2019-10-09T18:50:58Z
dc.date.issued	1995
dc.identifier.issn	1026-7123
dc.identifier.issn	1065-514X
dc.identifier.issn	1563-5171
dc.identifier.uri	https://hdl.handle.net/1969.1/181230
dc.format.extent	13	en
dc.publisher	VLSI Design
dc.relation.ispartof	1foldr Import 2019-10-08 Batch 6	en
dc.relation.uri	10.1155/1995/47065	en
dc.title	Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation	en