Electronic and vibrational properties of ultrathin Si O 2 films grown on Mo(112)

dc.creator	Wendt, S.
dc.creator	Ozensoy, E.
dc.creator	Wei, T.
dc.creator	Frerichs, M.
dc.creator	Cai, Y.
dc.creator	Chen, M. S.
dc.creator	Goodman, D. W.
dc.date.accessioned	2019-10-09T16:19:15Z
dc.date.available	2019-10-09T16:19:15Z
dc.date.issued	2005
dc.identifier.issn	1098-0121
dc.identifier.issn	1550-235X
dc.identifier.uri	https://hdl.handle.net/1969.1/180426
dc.format.extent	0	en
dc.publisher	Physical Review B - Condensed Matter and Materials Physics
dc.relation.ispartof	1foldr Import 2019-10-08 Batch 5	en
dc.relation.uri	10.1103/PhysRevB.72.115409	en
dc.title	Electronic and vibrational properties of ultrathin Si O 2 films grown on Mo(112)	en