dc.creator | Kuo, Yue | |
dc.date.accessioned | 2019-06-17T17:00:47Z | |
dc.date.available | 2019-06-17T17:00:47Z | |
dc.date.issued | 2006-05-02 | |
dc.identifier.uri | https://hdl.handle.net/1969.1/176816 | |
dc.description.abstract | A method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines portions of the conductive layer where vias through the conductive layer are desired. The method also includes exposing the semiconductor device to a plasma. The plasma converts the unmasked portions of the conductive layer into a compound. The method further includes exposing the semiconductor device to a treatment process to selectively remove the compound. The mask layer may be removed either before or after removal of the compound, thereby providing the unmasked conductive layer in the desired pattern. | en |
dc.language | eng | |
dc.publisher | United States. Patent and Trademark Office | |
dc.rights | Public Domain (No copyright - United States) | en |
dc.rights.uri | http://rightsstatements.org/vocab/NoC-US/1.0/ | |
dc.title | Method of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphere | en |
dc.type | Utility patent | en |
dc.format.digitalOrigin | reformatted digital | en |
dc.description.country | US | |
dc.contributor.assignee | The Texas A&M University System | |
dc.identifier.patentapplicationnumber | 10/753214 | |
dc.subject.uspcprimary | 438/669 | |
dc.subject.uspcother | 257/E21.3 | |
dc.subject.uspcother | 257/E21.309 | |
dc.subject.uspcother | 257/E21.311 | |
dc.subject.uspcother | 257/E21.592 | |
dc.subject.uspcother | 438/706 | |
dc.date.filed | 2004-01-05 | |
dc.publisher.digital | Texas A&M University. Libraries | |
dc.subject.cpcprimary | H01L 21/321 | |
dc.subject.cpcprimary | H01L 21/32134 | |
dc.subject.cpcprimary | H01L 21/32136 | |
dc.subject.cpcprimary | H01L 21/76888 | |