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dc.creatorKuo, Yue
dc.date.accessioned2019-06-17T17:00:47Z
dc.date.available2019-06-17T17:00:47Z
dc.date.issued2006-05-02
dc.identifier.urihttps://hdl.handle.net/1969.1/176816
dc.description.abstractA method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines portions of the conductive layer where vias through the conductive layer are desired. The method also includes exposing the semiconductor device to a plasma. The plasma converts the unmasked portions of the conductive layer into a compound. The method further includes exposing the semiconductor device to a treatment process to selectively remove the compound. The mask layer may be removed either before or after removal of the compound, thereby providing the unmasked conductive layer in the desired pattern.en
dc.languageeng
dc.publisherUnited States. Patent and Trademark Office
dc.rightsPublic Domain (No copyright - United States)en
dc.rights.urihttp://rightsstatements.org/vocab/NoC-US/1.0/
dc.titleMethod of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphereen
dc.typeUtility patenten
dc.format.digitalOriginreformatted digitalen
dc.description.countryUS
dc.contributor.assigneeThe Texas A&M University System
dc.identifier.patentapplicationnumber10/753214
dc.subject.uspcprimary438/669
dc.subject.uspcother257/E21.3
dc.subject.uspcother257/E21.309
dc.subject.uspcother257/E21.311
dc.subject.uspcother257/E21.592
dc.subject.uspcother438/706
dc.date.filed2004-01-05
dc.publisher.digitalTexas A&M University. Libraries
dc.subject.cpcprimaryH01L 21/321
dc.subject.cpcprimaryH01L 21/32134
dc.subject.cpcprimaryH01L 21/32136
dc.subject.cpcprimaryH01L 21/76888


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