Method of forming lattice matched layer over a surface of a silicon substrate
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A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may comprise arsenic, germanium, or CaF2, among others. The lattice matched layer is then grown (26) on the passivation layer.
Kirk, Wiley P.; Zhou X, Joe; Gnade, Bruce E.; Cho, Chih-chen (2002). Method of forming lattice matched layer over a surface of a silicon substrate. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from