Method of forming lattice matched layer over a surface of a silicon substrate

dc.creator	Kirk, Wiley P.
dc.creator	Zhou X, Joe
dc.creator	Gnade, Bruce E.
dc.creator	Cho, Chih-chen
dc.date.accessioned	2019-06-17T16:56:48Z
dc.date.available	2019-06-17T16:56:48Z
dc.date.issued	2002-07-16
dc.identifier.uri	https://hdl.handle.net/1969.1/176696
dc.description.abstract	A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may comprise arsenic, germanium, or CaF2, among others. The lattice matched layer is then grown (26) on the passivation layer.	en
dc.language	eng
dc.publisher	United States. Patent and Trademark Office
dc.rights	Public Domain (No copyright - United States)	en
dc.rights.uri	http://rightsstatements.org/vocab/NoC-US/1.0/
dc.title	Method of forming lattice matched layer over a surface of a silicon substrate	en
dc.type	Utility patent	en
dc.format.digitalOrigin	reformatted digital	en
dc.description.country	US
dc.contributor.assignee	Texas Instruments Incorporated
dc.contributor.assignee	Texas A&M University System
dc.identifier.patentapplicationnumber	08/340097
dc.subject.uspcprimary	117/84
dc.subject.uspcother	117/90
dc.subject.uspcother	438/761
dc.subject.uspcother	438/763
dc.date.filed	1994-11-15
dc.publisher.digital	Texas A&M University. Libraries
dc.subject.cpcprimary	C30B 29/48
dc.subject.cpcprimary	C30B 23/02