Band-edge properties of a semiconductor alloy: An NMR study of Hg1−xCdxTe

dc.creator	Shi, Jianhui
dc.creator	Wessels, Mark
dc.creator	Ross, Joseph H. Jr.
dc.date.accessioned	2016-01-15T06:54:00Z
dc.date.available	2016-01-15T06:54:00Z
dc.date.issued	1993
dc.identifier.citation	Phys. Rev. B 48, 8742 (1993)	en
dc.identifier.uri	https://hdl.handle.net/1969.1/156039
dc.description.abstract	We report Hg199 NMR measurements of narrow-gap Hg1−xCdxTe alloys in the range x=0.20–0.28. By studying temperature dependences, we have identified intrinsic Knight shifts in these alloys. This provides a measure of Hg orbital contributions to conduction-electron states, and we find a consistently strong average contribution from Hg s orbitals. Furthermore, we identify local variations in the Knight shift with spatial variations in conduction-electron densities and symmetries. These characteristics have been related to randomly populated sites within the alloys. We also discuss Hg199 chemical shifts and their relation to local orbital charges.	en
dc.language.iso	en_US
dc.publisher	American Physical Society
dc.title	Band-edge properties of a semiconductor alloy: An NMR study of Hg1−xCdxTe	en
dc.type	Article	en
local.department	Physics and Astronomy	en
dc.identifier.doi	10.1103/PhysRevB.48.8742