| dc.creator | Vyborny, Karel | |
| dc.creator | Kucera, Jan | |
| dc.creator | Sinova, Jairo | |
| dc.creator | Rushforth, A. W. | |
| dc.creator | Gallagher, B. L. | |
| dc.creator | Jungwirth, T. | |
| dc.date.accessioned | 2012-09-19T20:05:45Z | |
| dc.date.available | 2012-09-19T20:05:45Z | |
| dc.date.issued | 2009 | |
| dc.identifier.citation | Karel Vyborny, Jan Kucera, Jairo Sinova, A. W. Rushforth, B. L. Gallagher and T. Jungwirth. Phys.Rev.B 80 165204 2009."Copyright (2009) by the American Physical Society." | en |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.80.165204 | |
| dc.identifier.uri | https://hdl.handle.net/1969.1/146830 | |
| dc.description | Journals published by the American Physical Society can be found at http://journals.aps.org/ | en |
| dc.description.abstract | Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization. | en |
| dc.language.iso | en | |
| dc.publisher | American Physical Society | |
| dc.rights | This work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries. | en |
| dc.subject | SEMICONDUCTORS | en |
| dc.subject | ALLOYS | en |
| dc.subject | RESISTIVITY | en |
| dc.subject | ELECTRONS | en |
| dc.subject | METALS | en |
| dc.subject | Physics | en |
| dc.title | Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As | en |
| dc.type | Article | en |
| local.department | Physics and Astronomy | en |
