| dc.creator | Garate, Ion | |
| dc.creator | Sinova, Jairo | |
| dc.creator | Jungwirth, T. | |
| dc.creator | MacDonald, A. H. | |
| dc.date.accessioned | 2012-09-19T20:05:44Z | |
| dc.date.available | 2012-09-19T20:05:44Z | |
| dc.date.issued | 2009 | |
| dc.identifier.citation | Ion Garate, Jairo Sinova, T. Jungwirth and A. H. MacDonald. Phys.Rev.B 79 155207 2009."Copyright (2009) by the American Physical Society." | en |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.79.155207 | |
| dc.identifier.uri | https://hdl.handle.net/1969.1/146826 | |
| dc.description | Journals published by the American Physical Society can be found at http://journals.aps.org/ | en |
| dc.description.abstract | We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn concentrations above 1% quantum interference corrections lead to negative magnetoresistance, i.e., to weak localization (WL) rather than weak antilocalization (WAL). Our work highlights key qualitative differences between (Ga,Mn)As and previously studied toy-model systems and pinpoints the mechanism by which exchange splitting in the ferromagnetic state converts valence-band WAL into WL. We comment on recent experimental studies and theoretical analyses of low-temperature magnetoresistance in (Ga,Mn)As which have been variously interpreted as implying both WL and WAL and as requiring an impurity-band interpretation of transport in metallic (Ga,Mn)As. | en |
| dc.language.iso | en | |
| dc.publisher | American Physical Society | |
| dc.rights | This work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries. | en |
| dc.subject | electrical conductivity | en |
| dc.subject | exchange interactions (electron) | en |
| dc.subject | ferromagnetic materials | en |
| dc.subject | gallium arsenide | en |
| dc.subject | magnetic semiconductors | en |
| dc.subject | magnetoresistance | en |
| dc.subject | manganese compounds | en |
| dc.subject | quantum interference phenomena | en |
| dc.subject | weak localisation | en |
| dc.subject | ELECTRON-ELECTRON INTERACTIONS | en |
| dc.subject | QUANTUM-WELLS | en |
| dc.subject | SEMICONDUCTORS | en |
| dc.subject | FILMS | en |
| dc.subject | TRANSPORT | en |
| dc.subject | SYSTEMS | en |
| dc.subject | ABSENCE | en |
| dc.subject | Physics | en |
| dc.title | Theory of weak localization in ferromagnetic (Ga,Mn)As | en |
| dc.type | Article | en |
| local.department | Physics and Astronomy | en |
