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dc.creatorSinova, Jairo
dc.creatorJungwirth, T.
dc.creatorLiu, X.
dc.creatorSasaki, Y.
dc.creatorFurdyna, JK
dc.creatorAtkinson, WA
dc.creatorMacDonald, AH.
dc.date.accessioned2012-09-19T20:05:32Z
dc.date.available2012-09-19T20:05:32Z
dc.date.issued2004
dc.identifier.citationJairo Sinova, T. Jungwirth, X. Liu, Y. Sasaki, JK Furdyna, WA Atkinson and AH MacDonald. Phys.Rev.B 69 085209 2004."Copyright (2004) by the American Physical Society."en
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.69.085209
dc.identifier.urihttp://hdl.handle.net/1969.1/146796
dc.descriptionJournals published by the American Physical Society can be found at http://journals.aps.org/en
dc.description.abstractWe describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn-moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as similar to10(5) A cm(-2).en
dc.language.isoen
dc.publisherAmerican Physical Society
dc.rightsThis work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries.en
dc.subjectSPIN-WAVESen
dc.subjectMULTILAYERSen
dc.subjectEXCITATIONen
dc.subjectGA1-XMNXASen
dc.subjectRESONANCEen
dc.subjectFILMSen
dc.subjectPhysicsen
dc.titleMagnetization relaxation in (Ga,Mn)As ferromagnetic semiconductorsen
dc.typeArticleen
local.departmentPhysics and Astronomyen


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