Second-order susceptibility from a tight-binding Hamiltonian

dc.creator	Dumitrica, T.
dc.creator	Graves, JS
dc.creator	Allen, Roland E.
dc.date.accessioned	2012-09-19T20:00:37Z
dc.date.available	2012-09-19T20:00:37Z
dc.date.issued	1998
dc.identifier.citation	T. Dumitrica, JS Graves and Roland E. Allen. Phys.Rev.B 58 15340-15343 1998."Copyright (1998) by the American Physical Society."	en
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.58.15340
dc.identifier.uri	https://hdl.handle.net/1969.1/146775
dc.description	Journals published by the American Physical Society can be found at http://journals.aps.org/	en
dc.description.abstract	Using a new formalism that modifies a tight-binding Hamiltonian to include interaction with a time-dependent electromagnetic field, we have obtained an analytical expression for the second-order susceptibility. This expression has been used to calculate the energy dependence of X-(2)(omega) for GaAs. The results are in agreement with previous calculations and with available experimental data. [S0163-1829(98)01848-7].	en
dc.language.iso	en
dc.publisher	American Physical Society
dc.rights	This work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries.	en
dc.subject	SEMICONDUCTORS	en
dc.subject	GAAS	en
dc.subject	CRYSTALS	en
dc.subject	Physics	en
dc.title	Second-order susceptibility from a tight-binding Hamiltonian	en
dc.type	Article	en
local.department	Physics and Astronomy	en