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    Response of GaAs to fast intense laser pulses

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    PhysRevB.58.13627.pdf (208.3Kb)
    Date
    1998
    Author
    Graves, JS
    Allen, Roland E.
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    Abstract
    Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight-binding electron-ion dynamics is used, in which an arbitrarily strong radiation field is included through a time-dependent Peierls substitution. The population of excited electrons, the atomic displacements, the atomic pair-correlation function, the band structure, and the imaginary part of the dielectric function are all calculated as functions of time, during and after application of each pulse. Above a threshold intensity, which results in promotion of about 10% of the electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This is most clearly revealed in the dielectric function epsilon(omega), which exhibits metallic behavior and loses its structural features after 100-200 fs. [S0163-1829(98)01843-8].
    URI
    http://dx.doi.org/10.1103/PhysRevB.58.13627
    http://hdl.handle.net/1969.1/146773
    Description
    Journals published by the American Physical Society can be found at http://journals.aps.org/
    Subject
    ELECTRON-HOLE PLASMA
    INDUCED PHASE-TRANSITIONS
    HELLMANN-FEYNMAN
    THEOREM
    TIGHT-BINDING THEORY
    SEMICONDUCTORS
    SI
    INSTABILITY
    DYNAMICS
    SILICON
    SURFACE
    Physics
    Department
    Physics and Astronomy
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    Citation
    JS Graves and Roland E. Allen. Phys.Rev.B 58 13627-13633 1998."Copyright (1998) by the American Physical Society."

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