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dc.creatorRATHNAYAKA, KDD
dc.creatorHENNINGS, BD
dc.creatorNaugle, Donald G.
dc.date.accessioned2012-09-19T20:00:33Z
dc.date.available2012-09-19T20:00:33Z
dc.date.issued1993
dc.identifier.citationKDD RATHNAYAKA, BD HENNINGS and Donald G. Naugle. Phys.Rev.B 48 6937-6940 1993."Copyright (1993) by the American Physical Society."en
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.48.6937
dc.identifier.urihttps://hdl.handle.net/1969.1/146762
dc.descriptionJournals published by the American Physical Society can be found at http://journals.aps.org/en
dc.description.abstractThe resistivity of codeposited amorphous Ti1-xAlx films has been measured from 1.5 to 300 K over the composition range 0.4 less-than-or-equal-to x less-than-or-equal-to 0.92, and the Hall coefficient has been measured at 4 K. The resistivity exhibits a relatively small temperature dependence. The magnitude of the room-temperature resistivity varies appreciably with composition, with a broad maximum around 250 muOMEGA cm near x almost-equal-to 0.5. The Hall coefficient is positive at x = 0.4 and increases to a maximum at x almost-equal-to 0.6. It becomes negative at x almost-equal-to 0.85 with a value comparable to that of liquid Al at the highest value of x. The positive values of the Hall coefficient and their dramatic increase with x below x almost-equal-to 0. 5 are discussed in terms of current theories for a positive Hall coefficient.en
dc.language.isoen
dc.publisherAmerican Physical Society
dc.rightsThis work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries.en
dc.subjectELECTRON-TRANSPORTen
dc.subjectALLOYSen
dc.subjectMETALSen
dc.subjectPhysicsen
dc.titleHall-Coefficient and Resistivity of Amorphous Ti1-Xalx Filmsen
dc.typeArticleen
local.departmentPhysics and Astronomyen


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