Browsing by Subject "GaN"
Now showing items 1-7 of 7
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(2020-04-16)This thesis presents a generalized multilevel power factor correction approach that utilizes low voltage GaN semiconductors, reduces inductor voltage, increases inductor current ripple frequency, and reduces capacitor ...
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(2016-12-08)The use of group III-V semiconductor materials promise superior performance compared to silicon and can be considered a fundamental paradigm shift away from mature silicon technology. Group III-V semiconductors allow for ...
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(2012-10-19)An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) ...
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(2018-11-07)This dissertation proposes a high-power density Interconnected Modular Multilevel Converter (IMMC) with sinusoidal output voltage for multiple applications. The proposed converter utilizes wide band gap devices at a high ...
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(2017-05-09)GaN devices have been dubbed ‘the future of high frequency, high power applications’ due to the material properties of GaN that promises a clear advantage over competing technologies. Heteroepitaxial growth of AlGaN/GaN ...
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(2014-07-31)GaN is a promising material for power and radio-frequency electronics due to its high breakdown electric field, thermal conductivity, and electron saturation velocity. Additionally, strong spontaneous and piezoelectric ...
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(2020-11-12)This research proposes a single-phase power factor correction (PFC) approach employing a GaN Totem-Pole topology with an H-Bridge Active Power Decoupling (APD). The proposed topology assures the achievement of high efficiency ...