Browsing by Subject "G11C 11/5642"

Now showing items 1-2 of 2

    • Joint rewriting and error correction in write-once memories 
      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
    • NAND flash reliability with rank modulation 
      Li, Yue; En Gad, Eyal; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-05-29)
      The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for ...