Browsing by Subject "G11C 11/5628"

Now showing items 1-5 of 5

    • Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2017-05-30)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Joint rewriting and error correction in write-once memories 
      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
    • Rank modulation for flash memories 
      Jiang, Anxiao; Mateescu, Robert; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-08-14)
      We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The ...
    • Rank-modulation rewriting codes for flash memories 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2015-07-21)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Rank-modulation rewriting codes for flash memories 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...