Browsing by Subject "G06F 3/064"

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    • Joint rewriting and error correction in write-once memories 
      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...