Browsing by Subject "C23C 14/024"
Now showing items 1-2 of 2
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(United States. Patent and Trademark Office; Texas A&M University. Libraries, 2001-07-24)A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source ...
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(United States. Patent and Trademark Office; Texas A&M University. Libraries, 2000-11-28)A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source ...