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    Method for forming SbSI thin films

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    6153262.pdf (323.6Kb)
    Date
    2000-11-28
    Author
    Pandey, Raghvendra K.
    Raina, Kanwal K.
    Solayappan, Narayanan
    Metadata
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    Abstract
    A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source (12) and buffer layer (16) with substrate (14) are placed in an ampoule (10). The ampoule is heated in a two-zone furnace (11). This causes the SbSI source (12) to form a vapor which reacts with the buffer layer (14) to form a thin film of SbSI.
    URI
    https://hdl.handle.net/1969.1/176650
    Subject
    427/255.4
    427/248.1
    427/372.2
    C23C 14/024
    C23C 14/06
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    • Texas A&M University Patents
    Citation
    Pandey, Raghvendra K.; Raina, Kanwal K.; Solayappan, Narayanan (2000). Method for forming SbSI thin films. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /176650.

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