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dc.creatorDonnelly, Joseph Patrick
dc.date.accessioned2012-06-07T22:58:59Z
dc.date.available2012-06-07T22:58:59Z
dc.date.created2000
dc.date.issued2000
dc.identifier.urihttp://hdl.handle.net/1969.1/ETD-TAMU-2000-THESIS-D67
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en
dc.descriptionIncludes bibliographical references (leaves 64-66).en
dc.descriptionIssued also on microfiche from Lange Micrographics.en
dc.description.abstractTo support the next generation of sub 100nm ULSI devices, a new high dielectric constant (K) thin film material must be developed. To reach these new smaller dimensions, thermally grown silicon dioxide would need to eventually be scaled to a thickness of around 1.2nm. At this thickness silicon dioxide fails due to direct tunneling current. In addition, such a thin layer is an ineffective barrier against boron diffusion. Tantalum oxide is a high K dielectric material that is currently being used in thin film transistors. Tantalum oxide has a dielectric constant of 20 to 25, but it typically has high leakage current due to the crystalline structure of the film or defects. To strengthen the electrical characteristics of tantalum oxide, it was doped with varying amounts of titanium oxide, aluminum oxide and silicon dioxide. The composite oxide films were deposited by reactive radio frequency (RF) cc-sputtering of two targets in a variety of oxygen and argon feed gas mixtures. The targets used were tantalum, aluminum, silicon and titanium. The films were also post-sputter annealed in oxygen at 600⁰C for 60 minutes, 700⁰C for 10 minutes or 700⁰C for 30 minutes. For tantalum oxide films doped with titanium oxide, the most important finding was the large increase in the dielectric constant of these films. Films deposited by co-sputtering titanium at or above 140W in 50 or 90% oxygen feed gases and subsequently annealed in oxygen at 700⁰C for 10 minutes had dielectric constants which ranged from 37 to 85. For tantalum oxide films doped with aluminum oxide, the most important finding was that the leakage current decreased and the breakdown voltage increased as the aluminum cc-sputter power was increased. Possible explanations for the changes in the electrical properties of the doped tantalum oxide films are given.en
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherTexas A&M University
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.subjectelectrical engineeringen
dc.subjectMajor electrical engineeringen
dc.titleDoped tantalum oxide high K dielectric thin filmsen
dc.typeThesisen
thesis.degree.disciplineelectrical engineeringen
thesis.degree.nameM.S.en
thesis.degree.levelMastersen
dc.type.genrethesisen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen


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