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dc.creatorTiner, Paul Alanen_US
dc.date.accessioned2012-06-07T22:38:51Z
dc.date.available2012-06-07T22:38:51Z
dc.date.created1994en_US
dc.date.issued1994
dc.identifier.urihttp://hdl.handle.net/1969.1/ETD-TAMU-1994-THESIS-T5885en_US
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractThe use of Plasma Etching, specifically Reactive Ion Etching (RIE), is a vital tool in manufacturing semiconductor devices. Most gases used in RIE processes were initially chosen because of their relatively low toxicity and reactivity. However, many of these gases have proven to be detrimental to the environment. Because of the low percentage of utilization of the gas in a plasma process, these effects are a major concern. Few methods exist in industry today to dispose of unused gases, and all of the known abatement processes produce some byproduct that must also be disposed. This work proposes a system to be attached to the exhaust of a RIE etch system that will reprocess etch gases for immediate use. This work win show that such a system is feasible at a relatively low cost. Reclaiming and reprocessing the etch gas will take several distinct steps. The different technologies that accomplish each step will be explained as well as why these technologies were chosen. An explanation of why such a process is advantageous from a non-environmental standpoint will also be given. Suggestions on how an actual system should be built will be given. A synopsis on the future plans of this program will also be presented.en_US
dc.format.mediumelectronicen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherTexas A&M Universityen_US
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en_US
dc.subjectelectrical engineering.en_US
dc.subjectMajor electrical engineering.en_US
dc.titleA conceptual design of a Reactive Ion Etch back end system for the direct reuse of process gasesen_US
dc.typeThesisen_US
thesis.degree.disciplineelectrical engineeringen_US
thesis.degree.nameM.S.en_US
thesis.degree.levelMastersen_US
dc.type.genrethesis
dc.type.materialtexten_US
dc.format.digitalOriginreformatted digitalen_US


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