Abstract
Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between the pore properties of porous silicon and fabrication conditions has been established. Porous silicon also was studied by differential temperature analysis, thermo-gravimetric analysis and x-ray diffraction. Porous silicon has the same crystalline structure as the wafer from which it was fabricated. Oxidization at 800'C converts the porous silicon totally to amorphous silicon dioxide. Oxidation at 600'C produces a mixture of crystalline silicon and amorphous silicon dioxide. The pore structure and pore properties of porous silicon are stable up to 600 'C.
Shao, Jianzhong (1994). Fabrication and properties of microporous silicon. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1994 -THESIS -S5286.