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Electronic-Structure of the Semimetals Bi and Sb
(American Physical Society, 1995)
We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will ...
Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp
(American Physical Society, 1991)
Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of first-row elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open ...
Electron-Ion Dynamics - a Technique for Simulating both Electronic-Transitions and Ionic Motion in Molecules and Materials
(American Physical Society, 1994)
Response of GaAs to fast intense laser pulses
(American Physical Society, 1998)
Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 ...
Second-order susceptibility from a tight-binding Hamiltonian
(American Physical Society, 1998)
Using a new formalism that modifies a tight-binding Hamiltonian to include interaction with a time-dependent electromagnetic field, we have obtained an analytical expression for the second-order susceptibility. This ...
Internal Image Potential in Semiconductors - Effect on Scanning-Tunneling-Microscopy
(American Physical Society, 1993)
The tunneling of electrons from a semiconductor surface to a metal tip, across a vacuum gap, is influenced by two image interactions: an attractive image potential in the vacuum region, which lowers the apparent tunneling ...