Abstract
Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models of the semiconductor are introduced. In the first model, the charge on the surface of semiconductor is due only to polarization. In the second model, surface charge can elm be due to electron sat-fee states. We study the surface and bulk potential, and screening charge distributions. We determine the sluice screening length for the screening of a charged surface defect, and the interaction energy between two charged surface defects. We find the spatial scales over which dielectric and metallic properties of the semiconductors dominate. We discuss the influence of the semiconductor's properties on the screening mechanisms.
Krcmar, Maja (1998). Electrostatic screening by semiconductors. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1998 -THESIS -K734.