Abstract
Porous silicon has become potentially important material for microelectronics applications. By using low energy implantation and energy scan implantation, a stable silicide with good electrical conductivity can be formed, and can be used as an electrode in field emission applications. In this project, the formation of a CoSi2, conducting layer on porous silicon by high dose ion implantation while preserving the pore structure and field emission properties of the underlying porous silicon are reported. The cobalt silicide formation, annealing behavior, and the oxidation of Co and Si were studied and characterized by RBS-Channeling analysis and electrical measurements. Successful extraction of field emission electrons into the vacuum suggested the possibilities of vacuum microelectronics triodes, applications in flat panel display, and other high speed devices.
Liu, Hongbiao (1995). Field emission study of cobalt ion implanted porous silicon. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1995 -THESIS -L572.