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dc.creatorWest, Michael Keithen_US
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to, referencing the URI of the item.en_US
dc.descriptionIncludes bibliographical references (leaves 46-47).en_US
dc.description.abstractHigh fluence ion implantation of Ga ions was conducted ics. on heated Zircaloy-4 in the range of [] Ga ions/[]. Surface effects were studied using SEM and electron microphone analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluency of [] Ga ions/[]. After implantation of [] Ga ions/[], sub-grain features on the order of 2 gm were observed which may be due to intermetallic compound formation between Ga and Zr. For the highest fluency implant, Ga content in the Zirc-4 reached a saturation value of between 30 and 40 atomic %; significant enhanced diffusion was observed but gallium was not seen to concentrate at grain boundaries.en_US
dc.publisherTexas A&M Universityen_US
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en_US
dc.subjectnuclear engineering.en_US
dc.subjectMajor nuclear engineering.en_US
dc.titleGallium interactions with Zircaloyen_US
dc.typeThesisen_US engineeringen_US
dc.format.digitalOriginreformatted digitalen_US

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