Abstract
In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET. The commonly used alloyed ohmic contacts to n-GaSb are the Au, Au/Te contact schemes introduced by Heinz in 1983. The contact resistivities-0.5-1 (omega)-4 CM2 were achieved. The recently developed PdSPd contact reported a resistivity of 2x 10-5 (omega)CM2. ln this thesis work, I developed a novel ohmic-tic contact scheme Au/In/Pd/Te/Pd to n-GaSb with lower contact resistivity (i.e., in the range of 10-'6 (omega)CM2 ) and excellent thermal stability. I also developed Au/Pd and Au/Cr/Pd to n-GaSb contact schemes which improved the commonly used Au based contacts. To understand the ohmic contact formation mechanisms, photoluminescence (PL) measurement was used to characterize impurity and defect states in n-GaSb. Transmission Electron Microscopy (TEM) and Rutherford Backscattering Spectrometry (RBS) were used to detern-tine the cross sectional morphology and element reactions along the interface of metal and semiconductor. These results are discussed in this thesis.
Yang, Zhengchong (1997). Ohmic contacts to n-GaSb. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1997 -THESIS -Y136.