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dc.creatorMondragon, Antonio Richard
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to, referencing the URI of the item.en
dc.descriptionIncludes bibliographical references: p. 36.en
dc.descriptionIssued also on microfiche from Lange Micrographics.en
dc.description.abstractA propagator method is introduced for calculating the transmission spectra of semiconductor nanostructures, and the bound state energies and wave functions of quantum wells. This method is then generalized to include the effects of a nonpa,rabolic dispersion relation. Calculations are done for model cases and compared to analytical results. The original and generalized methods are then applied to real world device potential profiles. In particular, the bipolar quantum resonant tunneling transistor (BiQuaRTT) is considered in detail. The quantum-mechanical origin of the negative differential resistance (NDR) resonances observed in the BiQuaRTT is investigated. We present arguments as to why these resonances occur even in the absence of an emitter/base barrier. Models are presented to predict the base/collector biases at which NDR resonances occur, and are compared to previous models.en
dc.publisherTexas A&M University
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.subjectMajor physics.en
dc.titleTransmission resonances in the bipolar quantum resonant tunneling transistoren
dc.format.digitalOriginreformatted digitalen

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