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dc.creatorTang, Zhilong
dc.date.accessioned2012-06-07T22:43:01Z
dc.date.available2012-06-07T22:43:01Z
dc.date.created1995
dc.date.issued1995
dc.identifier.urihttps://hdl.handle.net/1969.1/ETD-TAMU-1995-THESIS-T364
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en
dc.descriptionIncludes bibliographical references.en
dc.descriptionIssued also on microfiche from Lange Micrographics.en
dc.description.abstractThis thesis describes a piece-wise approximation of transient current response of the digital BiCMOS gate. Based on the detailed transient analysis of the conventional digital BiCMOS gate, a new circuit model for digital BiCMOS gate is derived which is very useful in characterizing the current response of the BiCMOS gate. By the new circuit model, the piece-wise current response expression is derived which shows good agreement with SPICE simulation.en
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherTexas A&M University
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.subjectelectrical engineering.en
dc.subjectMajor electrical engineering.en
dc.titleModeling the current behavior of the digital BiCMOS gateen
dc.typeThesisen
thesis.degree.disciplineelectrical engineeringen
thesis.degree.nameM.S.en
thesis.degree.levelMastersen
dc.type.genrethesisen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen


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