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dc.creatorLiu, Hongbiao
dc.date.accessioned2012-06-07T22:41:22Z
dc.date.available2012-06-07T22:41:22Z
dc.date.created1995
dc.date.issued1995
dc.identifier.urihttps://hdl.handle.net/1969.1/ETD-TAMU-1995-THESIS-L572
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en
dc.descriptionIncludes bibliographical references.en
dc.descriptionIssued also on microfiche from Lange Micrographics.en
dc.description.abstractPorous silicon has become potentially important material for microelectronics applications. By using low energy implantation and energy scan implantation, a stable silicide with good electrical conductivity can be formed, and can be used as an electrode in field emission applications. In this project, the formation of a CoSi2, conducting layer on porous silicon by high dose ion implantation while preserving the pore structure and field emission properties of the underlying porous silicon are reported. The cobalt silicide formation, annealing behavior, and the oxidation of Co and Si were studied and characterized by RBS-Channeling analysis and electrical measurements. Successful extraction of field emission electrons into the vacuum suggested the possibilities of vacuum microelectronics triodes, applications in flat panel display, and other high speed devices.en
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherTexas A&M University
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.subjectelectrical engineering.en
dc.subjectMajor electrical engineering.en
dc.titleField emission study of cobalt ion implanted porous siliconen
dc.typeThesisen
thesis.degree.disciplineelectrical engineeringen
thesis.degree.nameM.S.en
thesis.degree.levelMastersen
dc.type.genrethesisen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen


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