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Some electron transport properties of two wide bandgap semiconductors, gallium phosphide and indium gallium phosphide
dc.contributor.advisor | Parker, Donald L. | |
dc.creator | Johnson, Ralph Herbert | |
dc.date.accessioned | 2020-08-21T21:40:33Z | |
dc.date.available | 2020-08-21T21:40:33Z | |
dc.date.issued | 1985 | |
dc.identifier.uri | https://hdl.handle.net/1969.1/DISSERTATIONS-434716 | |
dc.description | Typescript (photocopy). | en |
dc.description.abstract | Electron transport in gallium phosphide epilayers and indium gallium phosphide epilayers lattice matched to GaAs has been studied. The epilayers were grown using LPE with a graphite slider boat in a palladium diffused hydrogen atmosphere. The gallium phosphide electron v-E characteristic was measured using a novel variation on the conductivity technique. The resulting curves were fit using a nonlinear least squares method to two empirical models commonly used for silicon. The resulting drift mobility, ~ 85 cm^2/v - s, is half the measured Hall mobility. The resulting saturated drift velocity, ~ 1.3 x 10^7 cm/sec, is consistent with predictions and is substantially higher than for narrower bandgap III-V compounds. In addition the electron Hall mobility has been measured in indium gallium phosphide layers lattice matched to gallium arsenide. The resulting Hall mobilities, ~ 1000 cm^2/v - s, are approximately an order of magnitude greater than for gallium phosphide. | en |
dc.format.extent | xi, 116 leaves | en |
dc.format.medium | electronic | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | |
dc.rights | This thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use. | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.subject | Major electrical engineering | en |
dc.subject.classification | 1985 Dissertation J68 | |
dc.subject.lcsh | Semiconductors | en |
dc.subject.lcsh | Testing | en |
dc.subject.lcsh | Electron transport | en |
dc.title | Some electron transport properties of two wide bandgap semiconductors, gallium phosphide and indium gallium phosphide | en |
dc.type | Thesis | en |
thesis.degree.grantor | Texas A&M University | en |
thesis.degree.name | Doctor of Philosophy | en |
thesis.degree.name | Ph. D | en |
dc.contributor.committeeMember | Anjaneyulu, Y. | |
dc.contributor.committeeMember | Green, P. J. | |
dc.contributor.committeeMember | Strader, N. R. | |
dc.type.genre | dissertations | en |
dc.type.material | text | en |
dc.format.digitalOrigin | reformatted digital | en |
dc.publisher.digital | Texas A&M University. Libraries | |
dc.identifier.oclc | 14876958 |
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