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dc.contributor.advisorEknoyan, O.
dc.contributor.advisorHyslop, Adin E.
dc.creatorNamboodiri, Agnisarman
dc.date.accessioned2020-08-21T21:30:41Z
dc.date.available2020-08-21T21:30:41Z
dc.date.issued1978
dc.identifier.urihttps://hdl.handle.net/1969.1/DISSERTATIONS-324316
dc.descriptionVita.en
dc.description.abstractA two dimensional numerical model for the lateral pnp transistor is presented. Heavy doping effects are taken into account by employing doping dependent intrinsic concentration. Terminal characteristics of the injector of an Integrated Injection Logic unit are predicted and the results are verified from measurements made on o identical devices. The propagation delay time of the I^2L unit is also predicted. By comparing the results with those obtained from a conventional model, it is shown that such a model is not adequate enough in predicting the terminal characteristics of the lateral pnp transistor.en
dc.format.extentxiii, 84 leavesen
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subjectMajor electrical engineeringen
dc.subject.lcshTransistorsen
dc.titleTwo dimensional numerical model for the lateral PNP transistoren
dc.typeThesisen
thesis.degree.grantorTexas A&M Universityen
thesis.degree.nameDoctor of Philosophyen
dc.type.genredissertationsen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen
dc.publisher.digitalTexas A&M University. Libraries
dc.identifier.oclc4699947


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