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dc.contributor.advisorEisner, Melvin
dc.creatorHoffman, William L.
dc.date.accessioned2020-01-08T18:10:17Z
dc.date.available2020-01-08T18:10:17Z
dc.date.created1967
dc.date.issued1966
dc.identifier.urihttps://hdl.handle.net/1969.1/DISSERTATIONS-179440
dc.format.extent46 pagesen
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subjectPhysicsen
dc.titleThe microwave resistivity of indium antimonide at high electric drift fieldsen
dc.typeThesisen
thesis.degree.disciplinePhysicsen
thesis.degree.grantorTexas A&M Universityen
thesis.degree.nameDoctor of Philosophyen
thesis.degree.levelDoctoralen
dc.contributor.committeeMemberLuther, H. A.
dc.contributor.committeeMemberHam, Joe S.
dc.contributor.committeeMemberDuller, Nelson
dc.contributor.committeeMemberHedges, R. M.
dc.type.genredissertationsen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen
dc.publisher.digitalTexas A&M University. Libraries


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