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Electron field emission in porous silicon
dc.contributor.advisor | Parker, Donald L. | |
dc.creator | Yue, Wing Kong | |
dc.date.accessioned | 2024-02-09T21:19:06Z | |
dc.date.available | 2024-02-09T21:19:06Z | |
dc.date.issued | 1991 | |
dc.identifier.uri | https://hdl.handle.net/1969.1/DISSERTATIONS-1274318 | |
dc.description | Typescript (photocopy) | en |
dc.description | Vita | en |
dc.description | Major subject: Electrical Engineering | en |
dc.description.abstract | Anodization of a heavily doped silicon wafer followed by oxidation can build a structure of an insulated layer with vertical voids on the substrate. When a positive potential is applied on the top of the insulating layer, electron field emission occurs in the voids. This field emission current is neither constrained by the external energy supply as in thermionic electron tube, nor is it constrained by the low carrier supply as in semiconductor devices. The study has led to the development of the oxidized porous silicon field emission devices. These devices are temperature independent. They operate at a voltage below 10 volts with high current density. The application of the devices are anticipated in vacuum integrated circuits, flat panel displays, and high frequency circuits. | en |
dc.format.extent | x, 83 leaves | en |
dc.format.medium | electronic | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | |
dc.rights | This thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use. | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.subject | Major electrical engineering | en |
dc.subject.classification | 1991 Dissertation Y94 | |
dc.subject.lcsh | Microelectronics | en |
dc.subject.lcsh | Silicon | en |
dc.subject.lcsh | Field emission | en |
dc.title | Electron field emission in porous silicon | en |
dc.type | Thesis | en |
thesis.degree.discipline | Electrical Engineering | en |
thesis.degree.grantor | Texas A&M University | en |
thesis.degree.name | Doctor of Philosophy | en |
thesis.degree.name | Ph. D | en |
thesis.degree.level | Doctorial | en |
dc.contributor.committeeMember | Congleton, Jerome J. | |
dc.contributor.committeeMember | Lu, Mi | |
dc.contributor.committeeMember | Taylor, Henry F. | |
dc.contributor.committeeMember | Weichold, Mark H. | |
dc.type.genre | dissertations | en |
dc.type.material | text | en |
dc.format.digitalOrigin | reformatted digital | en |
dc.publisher.digital | Texas A&M University. Libraries | |
dc.identifier.oclc | 26788619 |
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