Characterization Of GaSb/Sb Heterostructures By Scanning Tunneling Microscopy

Abstract

GaSb/Sb heterostructures hold the promise of being very interesting materials. Properties introduced by the growth of the semiconductor and semi-metal together may prove to be very useful in various electronic devices. Various configurations of were grown at the University of Houston for STM characterization. The equipment necessary for the characterization of the heterostructures was already in place in the laboratory. Using this equipment, samples were placed in an ultra-high vacuum(UHV) system by means of a linear motion device. They were cleaved in UHV to expose a clean surface and then transported by means of a second linear motion device to the STM. There a characterization using of their electronic and spatial structure was made. Specifically, band gap values and offsets were determined, as well as Fermi levels. Also, with the imaging capabilities of the STM, the surface structure was investigated. Special tips were fabricated for this work.