CMOS temperature sensor utilizing interface-trap charge pumping
Abstract
The objective of this thesis is to introduce an alternative temperature sensor
in CMOS technology with small area, low power consumption, and high resolution
that can be easily interfaced. A novel temperature sensor utilizing the interfaceâÂÂtrap
charge pumping phenomenon and the temperature sensitivity of generation current
is proposed.
This thesis presents the design and characterization of the proposed temperature
sensor fabricated in 0.18õm CMOS technology. The prototype sensor is characterized
for the temperature range of 27oCâÂÂ120oC. It has frequency output and exhibits linear
transfer characteristics, high sensitivity, and high resolution. This temperature sensor
is proposed for microprocessor thermal management applications.
Subject
temperature sensorcmos sensor
silicon sensor
thermal management
interface trap charge pump
gate controlled diode
Citation
Berber, Feyza (2005). CMOS temperature sensor utilizing interface-trap charge pumping. Master's thesis, Texas A&M University. Texas A&M University. Available electronically from https : / /hdl .handle .net /1969 .1 /4157.