Analysis of silicon carbide based semiconductor power devices and their application in power factor correction

Abstract

Recent technological advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a stage that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Material technologies superior to Si are needed for future power device developments. Silicon Carbide (SiC) based semiconductor devices offer one such alternative. SiC based power devices exhibit superior properties such as very low switching losses, fast switching behavior, improved reliability and high temperature operation capabilities. Power factor correction stage of power supplies is identified as an area where application of these devices would prove advantageous. In this thesis a high performance, high efficiency, SiC based power factor correction stage is discussed. The proposed topology takes advantage of the superior properties of SiC semiconductor based devices and the reduced number of devices that the dual boost power factor correction topology requires to achieve high efficiency, small size and better performance at high temperature. In addition to this analysis of SiC based power devices is carried out to study their characteristics and performance.