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Rank modulation for flash memories
(United States. Patent and Trademark Office, 2012-08-14)
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The ...
Error correcting codes for rank modulation
(United States. Patent and Trademark Office, 2012-07-17)
We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the ...